光応答測定による半導体内部構造解析方法

概要

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In this report, the analytic method of the optical response mode for semiconductor materials is given anexplanation, and the two samples of electrical characteristics were investigated by means of this analyticmethod. This analysis is carried out by means of the photoconduction characteristic measurement dependon the electric field strength in the material. The material has different absorption coefficients each wavelengths, and has different complete light absorption lengths. Then, it is possible to select the analysis areaat the material. First sample, ITO(Indium Tin Oxide) was used on the glass substrates as the transparentelectrode, and ZnSe and CdTe layer was prepared by the vacuum deposition on this ITO. Next sample,ITO was used on the glass substrates as the transparent electrode too, and ZnSe, CdTe and ZnTe layerswere prepared by the vacuum deposition on this ITO. From the analytical result of this analytic method,the electric field and potential distribution of two samples became clear.
大島商船高等専門学校の論文
2009-12-01