II-VI族化合物半導体ITO-ZnSe-CdTeセルの電気特性

概要

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In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, andZnSe and CdTe layer was prepared by the vacuum deposition on this ITO. Then, the electricalcharacteristics of this sample were investigated by mans of the electric current transport analysis. TheZnSe-CdTe sample that CdTe layer is prepared on ITO-ZnSe(0.1μm) substrate has not high-density levelat the junction surface, and the CdTe layer with little lattice imperfection can be prepared. From theanalysis, the ZnSe-CdTe junction has the p type bending band structure on the CdTe side, and has the ntype bending band structure on the ZnSe side. This ITO-ZnSe(0.1μm)-CdTe sample was tested as aphoto-cell for visible-light. This ITO-ZnSe(0.1μm)-CdTe sample has not sufficient electric currentresponse for the light absorption of CdTe layer. It is presumed that the electric filed in the CdTe layer isnot enough to drive the cell as a photo sensor.
大島商船高等専門学校の論文
2008-12-01