電流-電圧特性測定による半導体電流輸送機構の解折方法

概要

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In this report, the analytic method for the transport properties of semiconductor materials is given anexplanation, and the sample of electrical characteristics was investigated by mans of this analytic method.This analysis is carried out by means of the measurement on the current vs voltage characteristic.The analyzed sample, ITO(Indium Tin Oxide) was used on the glass substrates as the transparentelectrode, and ZnSe and CdTe layer was prepared by the vacuum deposition on this ITO. Then, theelectrical characteristics of this sample were investigated by mans of the electric current transportanalysis. The ZnSe-CdTe sample that CdTe layer is prepared on ITO-ZnSe(0.1μm) substrate has nothigh-density level at the junction surface, and the CdTe layer with little lattice imperfection can beprepared. From the analysis, the ZnSe-CdTe junction has the p type bending band structure on the CdTeside, and has the n type bending band structure on the ZnSe side. From the analytical result of thisanalytic method, the transport properties of this semiconductor materials sample became clear.
大島商船高等専門学校の論文
2009-12-01