Electrical characteristics of OFETs with thin gate dielectric
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概要
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In order to realize low voltage operation of pentacene-based field-effect-transistors (FETs), we have fabricated pantacene-based metal-oxide-semiconductor (MOS) diodes and FETs with thin SiO_2 gate dielectric, such as 3-10nm. Excellent capacitance-voltage (C-V) characteristics of pentacene-based MOS diodes were observed with small hysteresis width even though the gate dielectric thickness was very thin, such as 3nm. It also showed high mobility as 0.3cm^2/Vs and low operation voltage in the pentacene FETs.
- 社団法人電子情報通信学会の論文
- 2009-06-17
著者
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Song Y-U
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ohmi S.
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Song Y-u
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Song Y‐u
Tokyo Inst. Technol. Yokohama Jpn
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Ishiwara H.
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ishiwara H.
Konkuk Univ. Seoul Kor
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Ohmi S.
Tokyo Inst. Technol. Yokohama Jpn
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Ohmi S.
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Song Y-U.
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
関連論文
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- Electrical characteristics of OFETs with thin gate dielectric
- Electrical characteristics of OFETs with thin gate dielectric
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