Ohmi S. | Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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概要
- 同名の論文著者
- Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeriの論文著者
関連著者
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Song Y-U
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ohmi S.
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Song Y-u
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ohmi S.
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Song Y‐u
Tokyo Inst. Technol. Yokohama Jpn
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Ishiwara H.
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ishiwara H.
Konkuk Univ. Seoul Kor
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Ohmi S.
Tokyo Inst. Technol. Yokohama Jpn
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Song Y-U.
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Song Y-u
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ohmi S.
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ohmi S.
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
著作論文
- Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer(Session 3A : Emerging Device Technology 2)
- Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer(Session 3A : Emerging Device Technology 2)
- Electrical characteristics of OFETs with thin gate dielectric
- Electrical characteristics of OFETs with thin gate dielectric