Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer(Session 3A : Emerging Device Technology 2)
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概要
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N-type pentacene based metal-oxide-semiconductor (MOS) diodes were fabricated to realize complementary-metal-oxide-semiconductor (CMOS) on a same substrate using ultra-thin Yb layer such as 0.5-3 nm. The Yb layer with low work function (2.7 eV) help to improve n-type characteristics of pentacene because lowest unoccupied molecular orbital (LUMO) level of pentacene is 3.0 eV. From the capacitance-voltage (C-V) measurements, the fabricated devices with 1-2 nm-thick Yb exhibited excellent n-type C-V characteristics despite the devices were measured in air. It is suggested that Yb interface layer is effective for improving n-type property of pentacene.
- 2010-06-23
著者
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Song Y-U
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ohmi S.
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Song Y-u
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Song Y‐u
Tokyo Inst. Technol. Yokohama Jpn
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Song Y-u
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ohmi S.
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ohmi S.
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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