Low Leakage La_2O_3 Gate Insulator Film with EOTs of 0.8-1.2nm

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• IWAI H.

  Tokyo Institute of Technology

• Ohmi S.

  Tokyo Inst. Technol. Yokohama Jpn

• Ohmi S.

  Tokyo Institute Of Technology

• Tokumitsu E.

  Tokyo Institute Of Technology

• KOBAYASHI C.

  Tokyo Institute of Technology

• ISHIWARA H.

  Tokyo Institute of Technology

関連論文

• Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures : Remarkable Advantages of La_2O_3 over HfO_2
• Electrical characteristics of OFETs with thin gate dielectric
• Electrical characteristics of OFETs with thin gate dielectric
• Low Leakage La_2O_3 Gate Insulator Film with EOTs of 0.8-1.2nm

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