IGBT動作とバイポーラトランジスタ動作の基本的な違い : ここ12年のIGBT動作モデルの進歩(パワーエレクトロニクス及び半導体電力変換一般)

概要

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First, the author reviews the recent innovations on bipolar high power devices after author's previous review on IGBT in 1996. Then, the author would recall old papers concerning the high-voltage large-current density operation limits on bipolar transistors, GCTs and IGBTs. The detail comparison between these devices reveals that the operating mode of IGBT is far from the pnp transistor's one and it rather resembles the operation of pin diode. For instance, the n^- layer of IGBTs are too long to be expected as the classical bipolar transistor. Besides, both holes and free electrons simultaneously move through the n^- layer by the drift although only one carrier moves by the diffusion in its base region of bipolar transistor. Because this characteristic is distinctive feature of pin diode, the author would like to propose that the operating mode of IGBT would be considered as a partial pin diode with serially connected MOSFET after an interval of twelve years.
社団法人電子情報通信学会の論文
2008-10-16