衝突電離作用の可逆過程となる再結合とその宇宙線破壊シミュレーションへの影響(パワーエレクトロニクス及び半導体電力変換一般)

概要

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If using the traditional recombination model, device simulations of the cosmic ray induced failures revealed that the shorter n^--length diode would fail more easily. However, no failure of diodes below 600V-class, at least, has been reported yet. To explain these experimental results, a strong recombination, which gets bigger together with carrier concentrations, should be necessary. It's because the inside of the device got uniform and stable if the generation rate and the recombination rate became equal. After the basic consideration on the reactions of carriers, the author arrived at the conclusion that it must be the direct recombination (R ∝ n_e n_h). The simulation that used this model forecast that low voltage diodes would not be destroyed by cosmic rays. Moreover, a useful clue for the explanation of the well known resistivity dependency on the failure voltage of the high voltage diodes was also obtained.
社団法人電子情報通信学会の論文
2008-10-16