Microstructure and Oxidation Resistance of Nanometer Sized SiC Coated Diamond Particles(Materials, Metallurgy & Weldability, INTERNATIONAL SYMPOSIUM OF JWRI 30TH ANNIVERSARY)
スポンサーリンク
概要
- 論文の詳細を見る
Diamond particles were completely covered with a very thin SiC layer of 〜200nm thick by a reaction of SiO vapor with diamond. The oxidation temperature of the SiC coated diamond particles started at about 920℃, which is 400℃ higher than that of diamond without SiC coating. The growth mechanism of the SiC layer and the oxidation resistance of the SiC coated diamond is reported.
- 大阪大学の論文
著者
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Miyamoto Yoshinari
Osaka University
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MORISADA Yoshiaki
Osaka University
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MORIGUCHI Hideki
Itami Research Laboratories, Sumitomo Electric Industries
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TSUDUKI Katsunori
Itami Research Laboratories, Sumitomo Electric Industries
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IKEGAYA Akihiko
Itami Research Laboratories, Sumitomo Electric Industries
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Ikegaya Akihiko
Itami Research Laboratories Sumitomo Electric Industries
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Moriguchi Hideki
Itami Research Laboratories Sumitomo Electric Industries
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Tsuduki Katsunori
Itami Research Laboratories Sumitomo Electric Industries
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