MOSFETにおける極薄酸化膜のトンネル電流と酸化膜遷移層の考察

概要

論文の詳細を見る
Recently the thin SiO2(silicon dioxide) Layer whose thickness is nanometer order is used generally in MOSFET. The reason is that the excellent technique can construct the thin layers through which tunneling current may be produced.This work describes how much effect the tunneling current gives on the drain current with decreasing SiO2 thickness. It is confirmed that the thin oxide layer much thicker than 1.2nm is not destroyed by simple electric field. On the other hand, it is known that the thermal oxide method provides the high-quality oxide layer: this shows high-quality structure(regularly hexagone-like atom arrangement on silicon wafers). In this view point a promising transition layer thickness between Si substrate and SiO2 layer is investigated and estimated in ideally minimum size(0.324nm on(100)and 0.529nm on(110)Si substrate).
福井大学の論文
2007-03-30