Incorporation of Cl into Hydrogenated Amorphous Silicon without Optical Band Gap Widening : Semiconductors

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概要

• 論文の詳細を見る

• Chlorine atoms were introduced into plasma deposited hydrogenated amorphous silicon films by adding HCl to SiH_4 containing discharge. Bulk and surface infrared spectra, film thickness and optical band gap were examined by in situ multiple total internal reflection Fourier transform infrared spectroscopy and spectroscopic ellipsometry. The growing top surface was chlorinated effectively and chlorine was incorporated into the growing film by abstraction and replacement of surface H. Cl concentration in the film is increased at the expense of decreasing H concentration, resulting in films with little optical band gap widening as compared to a-Si:H in spite of containing over 10^<21>cm^<-3> chlorine atoms, a concentration that is comparable to that of hydrogen.

• 社団法人応用物理学会の論文
• 2002-12-01

著者

• Takano Akihiro

  Fuji Electric Corporate Research And Development Ltd.:department Of Chemical Engineering University

• Takano Akihiro

  Fuji Electric Advanced Technology Co. Ltd.

• AYDIL Eray

  Department of Chemical Engineering, University of California

• Aydil Eray

  Department Of Chemical Engineering University Of California

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