Correlation between organic chemical reaction and chemical shift in carbon-doped silicon oxide film (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

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• SiOC film with sharp Si-CH_3 bond at 1260 cm^<-1> had the main band of 870-1350 cm^<-1>, which was deconvoluted the cage link and Si-O-C, Si-O-Si and Si-CH_3 bonds. The SiOC film of the flow rate ratio of O_2/BTMSM=1.07 changed to low frequency as the red shift in the main band of 870〜1350 cm^<-1> in spite of small difference of the flow rate ratio. Moreover, the peak near 838 cm^<-1> divided into two peaks at the SiOC film of the flow rate ratio of O_2/BTMSM=1.07 but other samples near 838 cm^<-1> showed the one peak. The red shift in SiOC film depended on the increasing the relative carbon content due to the variation of the bonding structure from the cross-link breakage structure to the cross-link structure.

• 2007-06-18

著者

• Oh Teresa

  School Of Electronic And Information Engineering Cheongju University

• Kim Hong

  School Of Electronics And Information Engineering Cheongju University

• Kim Hong

  School of Electronic and Information Engineering, Cheongju University, 36 Naedok-Dong Sangdang-Gu, Cheongju, Chungbuk 360-764, Korea

関連論文

• Correlation between organic chemical reaction and chemical shift in carbon-doped silicon oxide film (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Correlation between organic chemical reaction and chemical shift in carbon-doped silicon oxide film (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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