Origin of the SiCH3 Peak Position Shift in SiOC Films

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概要

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• SiOC films consist of the cross-linked or cross-link breakage structures depending on the variation in the flow rate ratio between O2 and bistrimethylsilylmethane due to the properties of the carbonyl group. As the results, SiOC films showed the sharp contrast in chemical shift, such as a blue and red shift. Generally, the Si–CH3 bond shows very strong bond, but the position of Si–CH3 peak in SiOC films varied depending on the bonding structure. The Si–CH3 bond at 1250 cm-1 is due to bis(trimethylsilyl)methane gas, which does not fully dissociated by substitution reaction unimolecular. On the other hand, the Si–CH3 bond at 1275 cm-1 originates from substitution reaction bimolecular inducing the reaction of nucleophilic attack of organometallic carbon.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-01-15

著者

• Oh Teresa

  School Of Electronic And Information Engineering Cheongju University

• Oh Teresa

  School of Electronic and Information Engineering, Cheongju University, 36 Naedukdong Sangdangku, Cheongju 360-764, Korea

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