Investigation on Electrical Properties of Low-Dielectric-Constant Fluorinated Amorphous Carbon Film

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概要

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• The bonding structure of fluorinated amorphous carbon film was changed with the electron density of the carbon which depends on the effect of C–H bond elongation and condensation. The leakage current in the fluorinated amorphous carbon film with an electron rich group was caused by the electron tunneling effect, depending on the Schottky effect, but in the film with an electron-deficient group, the leakage current decreased markedly because of the large barrier height attributed to the increase in electron affinity. The barrier height of the film with the electron-deficient group was calculated using the Poole–Frenkel model, and the barrier height increased with the increase in annealing temperature of the substrate.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-11-15

著者

• Oh Teresa

  School Of Electronic And Information Engineering Cheongju University

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