A Study on Manufacture and Evaluation of CMP pad with Controllable Contact Area(Surface and edge finishing)
スポンサーリンク
概要
- 論文の詳細を見る
Pad has a significant effect on Chemical Mechanical Polishing (CMP) preformance because of its properties. Generally, it is known that conventional polishing pad has irregular pores and asperities. Also, material removal rate decreases due to smoothing asperities and glazing phenonema of pad surface without conditioning during polishing process. So, a new pad with microstructure is fabricated by micro-molding technology, and its performance is verified through evaluation of removal rate, non-uniformity and repeatability in ILD CMP. For better stable material removal rate, the contact area should be maintained in a constant manner, and is realized in the new pad.
- 2005-10-18
著者
-
Jeong Haedo
School of Mechanical Engineering, Pusan National University
-
Park Kihyun
Department of Precision Mechanical Engineering, Pusan National University
-
Choi Jaeyoung
Department of Precision Mechanical Engineering, Pusan National University
-
Jung Jaewoo
Department of Precision Mechanical Engineering, Pusan National University
-
Park Jaehong
Rohm and Haas
-
Kinoshita Masaharu
Rohm and Haas
-
Jung Jaewoo
Department Of Precision Mechanical Engineering Pusan National University
-
Jeong Haedo
School Of Mechanical Engineering Pusan National University
-
Choi Jaeyoung
Department Of Precision Mechanical Engineering Pusan National University
-
Park Kihyun
Department Of Precision Mechanical Engineering Pusan National University
-
Park Kihyun
Department of Precision and Mechanical Engineering, Pusan National Univeristy, Jangjeon-dong, Geumjeong-gu, Busan 609-735, Korea
関連論文
- A Study on Manufacture and Evaluation of CMP pad with Controllable Contact Area(Surface and edge finishing)
- Tribological Effect of Abrasives on Material Removal in Oxide CMP(Surface and edge finishing)
- 503 Functional Prototype Development of Electronic Parts Using Rapid Prototyping Technology
- Kinematical Modeling of Pad Profile Variation during Conditioning in Chemical Mechanical Polishing
- Effect of Process Parameters on Friction Force and Material Removal in Oxide Chemical Mechanical Polishing
- Effect on Two-Step Polishing Process of Electrochemical Mechanical Planarization and Chemical–Mechanical Planarization on Planarization