Tribological Effect of Abrasives on Material Removal in Oxide CMP(Surface and edge finishing)
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概要
- 論文の詳細を見る
Chemical mechanical polishing (CMP) has been proved to achieve superior global and local planarization in the fabrication of semiconductor devices. Since CMP process depends on numerous complex factors, it is difficult to research a fundamental mechanism, development of consumables and so forth. Therefore, various tirbological approaches have recently been developed to analyze CMP characteristics. In this study, the authors have developed a real-time monitoring system which can measure the friction force. The correlation between the coefficient of friction and the material removal mechanism of abrasives in slurry was discussed with the change of abrasives concentration, type and size during oxide CMP process.
- 2005-10-18
著者
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Park Boumyoung
Department of Precision & Mechanical Engineering, Pusan National University
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Lee Hyunseop
Department of Precision & Mechanical Engineering, Pusan National University
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Kim Hyoungjae
Department of Mechanical Engineering, University of California
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Seo Heondeok
Department of Precision & Mechanical Engineering, Pusan National University
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Jeong Haedo
School of Mechanical Engineering, Pusan National University
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Jeong Haedo
School Of Mechanical Engineering Pusan National University
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Seo Heondeok
Department Of Precision & Mechanical Engineering Pusan National University
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Lee Hyunseop
Department Of Precision & Mechanical Engineering Pusan National University
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Kim Hyoungjae
Department Of Mechanical Engineering University Of California
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Park Boumyoung
Department Of Precision & Mechanical Engineering Pusan National University
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Park Boumyoung
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, U.S.A.
関連論文
- A Study on Manufacture and Evaluation of CMP pad with Controllable Contact Area(Surface and edge finishing)
- Tribological Effect of Abrasives on Material Removal in Oxide CMP(Surface and edge finishing)
- 503 Functional Prototype Development of Electronic Parts Using Rapid Prototyping Technology
- Kinematical Modeling of Pad Profile Variation during Conditioning in Chemical Mechanical Polishing
- Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing
- Effect of Process Parameters on Friction Force and Material Removal in Oxide Chemical Mechanical Polishing
- Prediction of Real Contact Area from Microtopography on CMP Pad
- Effect on Two-Step Polishing Process of Electrochemical Mechanical Planarization and Chemical–Mechanical Planarization on Planarization