Modification of the Quantum Hall Effect by the Charge State of a Nearby Quantum Dot Layer(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
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概要
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We investigate the magnetoresistance of a gated two-dimensional electron system (2DES) separated by a thin barrier from a layer of InAs self-assembled quantum dots (QDs). Clear features of the quantum Hall effect were observed despite the proximity of the QD layer to the 2DES. However, the magnetoresistance (ρ_<xx>) and Hall resistance (ρ_<xy>) were suppressed significantly in the magnetic field range corresponding to filling factor v<1 when a positive voltage was applied to the front gate. We attribute this to the effect of the charge state of the QD layer on the transport properties of the nearby 2DES. We propose that the anomalous suppression of ρ_<xx> and ρ_<xy> is related to spin excitation, which is induced by spin-flip processes involving electrons in the QDs and the 2DES.
- 社団法人日本物理学会の論文
- 2006-11-15
著者
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Takamasu Tadashi
National Institute For Materials Science
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Takehana Kanji
National Institute For Materials Science
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Henini Mohamed
School Of Physics And Astronomy University Of Nottingham
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Henini Mohamed
School of Physics and Astronomy, University of Nottingham
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Takamasu Tadashi
National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan
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