加熱気化/ICP-MSにおけるマトリックス成分補正方法の提案とSBT薄膜中微量金属への適用

概要

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We established a simple electrothermal vaporization (ETV)/inductively coupled plasma mass spectrometry (ICP-MS) technique without separating analyte elements from a matrix to determine trace metallic impurities of eight elements (Na, Mg, Al, Cr, Mn, Fe, Ni, and Cu) in a Y-1 (strontium (Sr)-bismuth (Bi)-tantalum (Ta)-oxygen (O)) thin film for semiconductor ferroelectric random-access memories. To improve the linearity of each calibration curve (20 pg ml^<-1>-10 ng ml^<-1>), we added the same concentration of Sr, Bi and Ta to a mixed standard solution as those in the sample solution as a mixed modifier. The recovery percentages obtained by adding 1 ng ml^<-1> of each element to the sample solution were between Al (90%)-Cr (105%). The detection limit (3σ) was 1.9×10^<10> (Mn)-1.3×10^<12> (Al) atoms cm^<-2> for a Y-1 thin film with a diameter of 150mm. The proposed method was applied to the real samples to determine the eight metallic elements (10^<11>-10^<13> atoms cm^<-2>).
2006-08-01