単結晶シリコンの破壊挙動に及ぼす欠陥寸法の影響に関する分子動力学解析

概要

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Thin films of single crystal silicon are expected to many applications for semiconductor devices and MEMS well. It is important to evaluate the mechanical properties of the thin film. Especially, it is essential to clarify the strength and fracture properties of the thin film with stress concentrations. In this study, MEAM molecular dynamics simulation is conducted to investigate the effect of notch depth on the deformation and fracture behavior. The loading direction is [110] and the notch is in the [001] direction on (110) plane. In a smooth specimen, Young's modulus was 153.1GPa which is less than that of the bulk material. In notched specimens, the stress at crack propagation decreases with increasing notch depth. When the notch depth is shorter than 1nm, the stress intensity factor at the crack propagation decrease with decreasing notch depth. However, when the notch depth is longer than 1nm, the stress intensity factor is nearly constant irrespective of notch depth.
社団法人日本機械学会の論文
2006-08-25