シリコン単結晶の X 線応力測定の一方法

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An X-ray method is proposed to measure the stress in a specimen made of silicon single crystal wafer which has the [001] direction perpendicular to the surface. In an X-ray diffractometer with parallel beam optics, X-ray profiles were recorded by a scintillation counter while the specimen was oscillated. The X-ray measurement conditions were first determined, and then the method was successfully applied to measure the loading stress in a silicon single specimen subjected to four-point bending. The oscillation of the specimen between ±1 to 2deg during recording is necessary to determine the peak position. The miss-setting of 25μm does not influence the measured stress value. The uniaxial stress was applied in [110] direction (longitudinal direction with φ=0deg) of the specimen and three stress components, σ_<11>, σ_<22> and σ_<12>, were determined from the measurement of strains in three directions, φ=0.90, and 45deg. From the diffractions of 115 and 333 for two directions φ=0 and 90deg, the stresses, σ_<11> and σ_<22>, were determined by the 2θ-sin^2ψ method. The shear stress component, σ_<12>, was determined from the strain measurements of two directions, φ=26.565 and 63.435deg by using the diffractions of 004 and 133. The measured stress of σ_<11> is 102% of the applied stress and the two other components, σ_<22> and σ_<12>, were nearly zero. The uniaxial state of stresses in plate under four point bending was confirmed as predicted by the finite element method.
社団法人日本材料学会の論文
2003-10-15

シリコン単結晶の X 線応力測定の一方法

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