Optical Properties of GaInNAs Alloy Semiconductors

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概要

• 論文の詳細を見る

• The GaInNAs alloy semiconductor is a new semiconductor material expected for the realization of the temperature-stable semiconductor laser diode with high characteristic temperature for the optical communication (both 1.3 and 1.55μm). Optical properties of GaInNAs are reviewed in this paper which have been measured on the device-grade epitaxial layers of GaInNAs grown on the GaAs substrate by the molecular-beam epitaxy. Two structures have been studied : (i) thick GaInNAs epitaxial layers (500nm) lattice-matched to GaAs and (ii) GaAs/GaInNAs/GaAs single quantum well (SQW) structures with the well thickness of 10nm. Photoluminescence (PL) and photo-modulated reflectance (PR) methods have been performed as optical characterization techniques. This study refers to (i) the effect of the rapid thermal annealing on PL and PR, (ii) the comparison of GaInNAs SQW with GaInAs SQW, (iii) temperature dependence of PL and PR properties, (iv) the effect of the exciton localization on PL spectra, and (v) the comparison of optical properties of the thick lattice-matched GaInNAs layer with those in SQW samples.

• 愛媛大学の論文

著者

• Shirakata Sho

  Ehime Univ.

• Shirakata Sho

  Department Of Electric And Electronic Engineering Faculty Of Engineering Ehime University

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