ZnO Nanowires Grown by Atmospheric Pressure Chemical Vapor Deposition Using ZnCl2 and H2O as Source Materials and Their Growth Mechanisms
スポンサーリンク
概要
- 論文の詳細を見る
Single crystalline ZnO nanowires (NWs) with diameters ranging from 80 to 700 nm were successfully grown on Ni-coated SiO2/Si(100) substrates by atmospheric pressure chemical vapor deposition (CVD) using ZnCl2 and H2O as source materials. Scanning electron microscope (SEM) and transmission electron microscope (TEM) observations revealed that the ZnO NWs grown by two types of CVD systems with different source feeding configurations exhibited different morphologies and growth directions, reflecting the difference in growth mechanism, i.e., vapor–liquid–solid (VLS) growth and vapor–solid (VS) growth. Photoluminescence spectra of the ZnO NWs exhibited a dominant near-band-edge (NBE) emission, indicating their high crystalline quality.
- 2005-11-10
著者
-
Shirakata Sho
Department Of Electric And Electronic Engineering Faculty Of Engineering Ehime University
-
Terasako Tomoaki
Ehime Univ.
-
Terasako Tomoaki
Department Of Electric And Electronic Engineering Faculty Of Engineering Ehime University
関連論文
- Raman Scattering and Two-Phonon Infrared Transmission Spectra of Cu(Al_xGa_)S_2 Crystals
- Deep Region Emissions of CuGaS_2 Crystals
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Structural and Optical Properties of Cu-In-Se and MgxZn1-xO Thin Films Prepared by Chemical Spray Pyrolysis
- ZnO Nanowires Grown by Atmospheric Pressure Chemical Vapor Deposition Using ZnCl2 and H2O as Source Materials and Their Growth Mechanisms
- Effects of In2O3:Sn on Preparation of Multiwalled Carbon Nanotubes by Atmospheric Pressure Chemical Vapor Deposition Using Ethanol as a Source Material
- Optical Properties of GaInNAs Alloy Semiconductors
- Photoluminescence Property of ZnSnP2 by Solution Growth and Normal Freezing Methods