Chemical Vapor-Deposited Amorphous Silicon Nitride

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概要

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• Chemical vapor-deposited amorphous Si_3N_4 (CVD-amorphous Si_3N_4) up to 4.2 mm in thickness has been prepared from a gaseous mixture of NH_3 and H_2-carried SiCl_4 under various deposition conditions. The formation of the CVD-amorphous Si_3N_4 depended strongly on the deposition temperature, total gas pressure and gas flow rate. The CVD-amorphous Si_3N_4 prepared at 1100-1300℃ does not crystallize by heating at each deposition temperature. Their density and deposition rate are markedly dependent on deposition conditions and have maximum values of 3.00 g/cm^3 (94% of the theoretical density of α-Si_3N_4) and 0.36 mm/hr, respectively. The Vickers microhardness of the CVD-amorphous Si_3N_4 at room temperature varies between 2200 and 3200 kg/mm^2 according to its deposition conditions. The hardness at 1300℃ is 1200〜1300 kg/mm^2. The thermal conductivity was 0.010 cal/cm/sec/℃ at 20℃ and 0.012 cal/cm/sec/℃ at 1300℃. The thermal expansion coefficient at 20〜1200℃ is 2.99±0.05/℃. The formation mechanism and the effect of gas flow patterns on the deposition rate of the CVD-amorphous Si_3N_4 are also discussed.

• 東北大学の論文

著者

• Niihara Koichi

  The Research Institute For Iron Steel And Other Metals

• Hirai Toshio

  The Research Institute For Iron Steel And Other Metals

• Goto Takashi

  The Research Institute For Iron Steel And Other Metals

• Hayashi Shinsuke

  The Research Institute for Iron, Steel and Other Metals

• Hayashi Shinsuke

  The Research Institute For Iron Steel And Other Metals

関連論文

• Th-ThC Phase Diagram
• Preferred Orientation in Pyrolytic Graphite
• Siliconated Pyrolytic Graphite : Part 1. Preparation and Some Properties
• Chemical Bond of CVD-Si_3N_4 by Compton Scattering Measurement
• The Preparation and Crystal Structure of Ternary Rare Earth Borides, RCo_3B_2
• Siliconated Pyrolytic Graphite : Part 4. Electrical Resistivity
• Microstructure and Density of Pyrolytic Graphite
• Mechanism of the Pyrolytic Graphite Formation
• The Crystal Data of Ternary Rare Earth Borides, RCo_2B_2
• Preparation and Thermal Expansion of Pyrolytic Graphite-Bromine Residual Compounds
• The Electrical Anisotropies of Pyrolytic Graphite and Its Compounds
• Siliconated Pyrolytic Graphite : Part 2. The State of Silicon Present in Siliconated Pyrolytic Graphite
• Siliconated Pyrolytic Graphite : Part 3. Structural Features
• Thermal Properties of Amorphous Si_3N_4-C Composites Prepared by Chemical Vapor Deposition
• Chemical Vapor-Deposited Amorphous Silicon Nitride
• The Crystal Structure and Nonstoichiometry of Rare Earth Oxyfluoride
• The Nonstoichiometry of Gadolinium Ditelluride
• The Crystal Data of Ternary Rare Earth Borides, RCo2B2
• The Crystal Structure and Nonstoichiometry of Rare Earth Oxyfluoride

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