On the Validity of Chemical Reaction Scheme in the Treatment of the Behaviour of Point Defects
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The validity of chemical reaction scheme is critically examined for isothermal annealing process of vacancies interacting with impurity atoms in the f.c.c. lattice. The scheme yields a considerably different result for the initial stage of annealing associated with the formation of impurity-vacancy complexes, when compared with the result of analytical discrete lattice calculation, while the two calculations give an identical result for later stage of annealing. The rate constant for complex formation is calculated for three different cases : chemical reaction scheme (C.R.S.), analytical discrete lattice calculation (D.L.C.) and continuum diffusion approximation (C.D.A.). C.R.S. neglects the concentration throughout the system. This smearing approximation is responsible for the difference in the rate constants by C.R.S. and D.L.C. The applicability of the chemical reaction scheme in the treatment of the behaviour of point defects is discussed generally.
- 東北大学の論文
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