The Change of the Electric Resistance of Bismuth Crystals in Strong Magnetic Fields. Part III : Experimental Results (2) The Change of Resistance of Bismuth Crystals in a Magnetic Field with the Current parallel and being inclined to the Direction of the

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The change of electric resistance of bismuth crystals and polycrystals in strong magnetic fields up to 200 kilo-oersted was observed at room temperature. The case when the current is parallel to the lines of force of the magnetic field was investigated for different orientations of the crystal axis relative to the magnetic field and a saturation effect was obtained. Experimental results are given for the change of resistance of bismuth polycrystals in the same case. The case when the relative direction between the lines of force of the magnetic field and the current was changed from the direction parallel to the direction perpendicular to each other was observed at each 15° for different orientations of crystal. It was found that the change of resistance was affected by the relative orientations between the direction of the lines of force of the magnetic field and the imperfect cleavage plane. It was found that in the special relative direction between the lines of force of the magnetic field and the current, the change of resistance was proportional to the field up to 200 kilo-oersted.
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