Operation of InGaAs/InP-Based Ballistic Rectifiers at Room Temperature and Frequencies up to 50 GHz
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-09-15
著者
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Omling Par
Solid State Physics And Nanometer Structure Consortium Lund University
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Samuelson Lars
Solid State Physics And Nanometer Structure Consortium Lund University
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Samuelson Lars
Solid State Physics
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Seifert Werner
Seifert Werner
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SONG Aimin
Solid State Physics and Nanometer Structure Consortium, Lund University
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SHORUBALKO Ivan
Solid State Physics and Nanometer Structure Consortium, Lund University
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ZIRATH Herbert
Department of Microwave Technology, Chalmers University of Technology
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SEIFERT Werner
SEIFERT,Werner
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SAMUELSON Lars
Solid State Physics and Nanometer Structure Consortium, Lund University
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OMLING Par
Solid State Physics and Nanometer Structure Consortium, Lund University
関連論文
- Operation of InGaAs/InP-Based Ballistic Rectifiers at Room Temperature and Frequencies up to 50 GHz
- Г-X Tunnelling in GaAs/AlAs/GaAs Heterostructure
- Controlled Carrier Depletion around Nano-Scale Metal Discs Embedded in GaAs
- Nanowire Field-Effect Transistor