Controlled Carrier Depletion around Nano-Scale Metal Discs Embedded in GaAs

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概要

• 論文の詳細を見る

• Matrices of uncontacted, nano-scale, tungsten discs, embedded in GaAs by epitaxial overgrowth, have been characterised electrically. By varying the spacing between the discs, it is demonstrated that when the disc separation is smaller than 300 nm (for a doping level of 10^<16> cm<^-3>), the conductance drops by seven orders of magnitude and the material becomes semi-insulating. The presence of the metal-induced barrier is deduced from the temperature dependence of the current transport. These results are discussed in terms of overlapping Schottky depletion regions around the discs.

• 社団法人応用物理学会の論文
• 1997-12-15

著者

• Litwin Andrej

  Nanometer Structure Consortium Lund University

• Samuelson Lars

  Solid State Physics And Nanometer Structure Consortium Lund University

• Samuelson Lars

  Solid State Physics

• WERNERSSON Lars-Eric

  Solid State Physics

• SEIFERT Wermer

  Nanometer Structure Consortium Lund University

関連論文

• Operation of InGaAs/InP-Based Ballistic Rectifiers at Room Temperature and Frequencies up to 50 GHz
• Controlled Carrier Depletion around Nano-Scale Metal Discs Embedded in GaAs
• Nanowire Field-Effect Transistor

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