Г-X Tunnelling in GaAs/AlAs/GaAs Heterostructure
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-01
著者
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Dubrovskii Y
Inst. Microelectronics Technol. And High Purity Material Russian Acd. Sci. Moscos District Run
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Dubrovskii Yurii
Institute Of Microelectronics Technology And High Purity Material Russian Academy Of Sciences
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Omling Par
Solid State Physics And Nanometer Structure Consortium Lund University
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Omling Par
Solid State Physics Lund University
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Vdovin Evgenii
Institute Of Microelectronics Technology And High Purity Material Russian Academy Of Sciences
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Novoselov Konstantin
Institute Of Microelectronics Technology And High Purity Material Russian Academy Of Sciences
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Khanin Yurii
Institute Of Microelectronics Technology And High Purity Material Russian Academy Of Sciences
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CARLSSON Sven-Bertil
Solid State Physics, Lund University
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Carlsson Sven-bertil
Solid State Physics Lund University
関連論文
- Operation of InGaAs/InP-Based Ballistic Rectifiers at Room Temperature and Frequencies up to 50 GHz
- Г-X Tunnelling in GaAs/AlAs/GaAs Heterostructure
- Γ-X Tunnelling in GaAs/AlAs/GaAs Heterostructure