Γ-X Tunnelling in GaAs/AlAs/GaAs Heterostructure
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概要
- 論文の詳細を見る
Tunnelling, via X-valley related states, is investigated in GaAs/AlAs/GaAs single-barrier structures. The features in the tunnel current, which are experimentally observed, are associated with resonant tunnelling through the X-valley AlAs quantum well states derived from the conduction band minima, both perpendicular (Xx and Xy) and parallel (Xz) to the (100) growth direction and the Si-donor states linked to the X valley. Tunnelling through the impurity states associated with Xz and Xxy valleys are observed for the first time.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-06-15
著者
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Dubrovskii Yurii
Institute Of Microelectronics Technology And High Purity Material Russian Academy Of Sciences
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Vdovin Evgenii
Institute Of Microelectronics Technology And High Purity Material Russian Academy Of Sciences
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Novoselov Konstantin
Institute Of Microelectronics Technology And High Purity Material Russian Academy Of Sciences
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Khanin Yurii
Institute Of Microelectronics Technology And High Purity Material Russian Academy Of Sciences
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Carlsson Sven-bertil
Solid State Physics Lund University
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Omling Pär
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
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Omling Pär
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden