Self-Assembled GaAs Quantum Dots on Pseudomorphic Si Layers Grown on AIGaAs by Molecular Beam Epitaxy : Semiconductors

概要

論文の詳細を見る
A new method to obtain self-assembled GaAs quantum dots is presented. In this method, one monolayer (ML) of Si is pseu-diomorphically grown on an AIGaAs layer by molecular beam epitaxy. The subsequent GaAs overgrowth proceeds in a three dimensional (3D) mode on the pseudorphic Si layer. For a GaAs growth equivalent to 2 ML, the self-assembled 3D islands presented an average height of 1.5nm, with an average lateral size of 20nm, and a density in the order of 1 × 10^<11> /cm^2. The Transition to 3D GaAs growth strongly depends on the Si interlayer thickness.
社団法人応用物理学会の論文
2002-08-15