New Ordering of the InAs Growth through High-Temperature Treatment of the GaAs (100) Substrates

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概要

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• We report the effects of the exposure of homoepitaxially grown GaAs buffer layers to high temperature with no As overpressure on the InAs growth front. It was observed that after using this thermal treatment the InAs bidimensional growth was preserved until a thickness of 3.0 monolayers was reached. Once the quantum dot formation took place, the atomic force microscopy images revealed a considerable improvement in the island size distribution as well as a reduction of the density compared with the InAs quantum dots grown conventionally. Moreover, a redshift of the photoluminescence spectra was observed for the samples subjected to the novel thermal treatment.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-04-15

著者

• Mendez-garcia Victor-hugo

  Instituto De Investigacion En Comunicacion Optica And Facultad De Ingenieria Universidad Autonoma De

• Yu Gorbatchev

  Instituto de Investigación en Comunicación Óptica and Facultad de Ingeniería, Universidad Autónoma de San Luis Potosí, Av. Karakorum 1470, Lomas 4a. Sección, San Luis Potosí, S.L.P., 78210, México

• Saucedo-Zeni Nadia

  Instituto de Investigación en Comunicación Óptica and Facultad de Ingeniería, Universidad Autónoma de San Luis Potosí, Av. Karakorum 1470, Lomas 4a. Sección, San Luis Potosí, S.L.P., 78210, México

関連論文

• Self-Assembled GaAs Quantum Dots on Pseudomorphic Si Layers Grown on AIGaAs by Molecular Beam Epitaxy : Semiconductors
• New Ordering of the InAs Growth through High-Temperature Treatment of the GaAs (100) Substrates
• New Ordering of the InAs Growth through High-Temperature Treatment of the GaAs (100) Substrates

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