Experimental Verification of Direct Tunneling Assisted Electron Capture of Disordered-Induced Gap States in Metal-Insulator-Semiconductor Structures
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概要
- 論文の詳細を見る
Energetical and spatial distributions of disordered-induced-gap-states (DIGS) in Al/SiN_x:H/InP metal-insulator-semiconductor (MIS) structures have been obtained by measuring conductance transients at various frequencies (ranging from 100HZ to 200 kHz) and temperatures (ranging from 77 to 300 K). Three-dimensional defect maps span 0.5 eV in energy and 40Å in depth. The highest amplitude of the conductance transients occurs for DIGS located at energies equal to the minimum of the semiconductor conduction band. This fact confirms that conductance transients are assisted by direct tunneling mechanisms, as was assumed in the conductance transient theory previously reported.
- 社団法人応用物理学会の論文
- 2002-11-01
著者
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Duenas Salvador
Departmento De Electricidad Y Electronica E. T. S. I. Telecomunicacion Campus "miguel Delibes&q
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Castán Helena
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Univ
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Barbolla Juan
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Univ
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Barbolla Juan
Departmento De Electricidad Y Electronica E. T. S. I. Telecomunicacion Campus "miguel Delibes&q
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Duenas Salvador
Department Electricidad y Electrdnica, ETSI Telecomunicacion, Universidad de Valladolid, Campus Miguel Delibes s-n
関連論文
- Electrical Characterization of Al/SiN_x:H/n and p-In_Ga_As Structures by Deep-Level Transient Spectroscopy and Conductance Transient Techniques
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- Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiO2/SiNx and SiOxNy Dielectric Films on Silicon Substrates
- Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Fil
- Experimental Verification of Direct Tunneling Assisted Electron Capture of Disordered-Induced Gap States in Metal-Insulator-Semiconductor Structures