パワーデバイスにおけるリードフレーム配線による熱特性の検討(J01-6 無抵抗評価,J01 エレクトロニクス実装における熱制御および信頼性評価)

概要

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This paper reports about the new interconnection technology for Power devices. Al wire bonding(WB) have been a standard interconnection at Power devices. Al WB is an effective, interconnection to supply currents to the power chip, but is not effective to remove power losses from the power chip surface. To remove power losses from the power chip surface, we apply Lead Frame(L/F) interconnection to the power chip with electroless Ni/Au plating electrode. We carried out finite element method(FEM) analysis about heat transfer, made L/F prototypes and evaluated them. The FEM analysis and experimental results show that L/F interconnections make lower junction temperature than Al WB interconnections.
一般社団法人日本機械学会の論文
2004-09-04