Analysis of a Novel Self-Aligned Elevated Source Drain Metal-Oxide-Semiconductor Field-Effect Transistor with Reduced Gate-Induced Drain Leakage Current and High Driving Capability

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-11-15

著者

• Choi Woo-Young

  Massachusetts Institute of Technology

• Choi Woo-young

  Department Of Electrical And Computer Engineering Yonsei University

• Kim Kyung-whan

  Department Of Electrical And Computer Engineering Yonsei University

• Choi Chang-soon

  Department Of Electrical And Computer Engineering Yonsei University

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• Analysis of a Novel Self-Aligned Elevated Source Drain Metal-Oxide-Semiconductor Field-Effect Transistor with Reduced Gate-Induced Drain Leakage Current and High Driving Capability
• ED2000-46 / SDM2000-46 Analysis of a High Performance Self-Aligned Elevated Source Drain MOSFET with Reduced Gate-Induced Drain-Leakage
• ED2000-44 / SDM2000-44 A Study on the Characteristics of High Performance Self-Aligned Asymmetric Structure (SAAS)
• ED2000-46 / SDM2000-46 Analysis of a High Performance Self-Aligned Elevated Source Drain MOSFET with Reduced Gate-Induced Drain-Leakage
• ED2000-44 / SDM2000-44 A Study on the Characteristics of High Performance Self-Aligned Asymmetric Structure(SAAS)
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