Demonstration of 60-GHz Link Using a 1.6-Gb/s Mixed-Mode BPSK Demodulator
スポンサーリンク
概要
- 論文の詳細を見る
A mixed-mode high-speed binary phase-shift keying (BPSK) demodulator for IEEE802.15.3c mm-wave wireless personal area network (WPAN) application is realized with 0.18-µm CMOS process. The proposed demodulator scheme does not require any analog-to-digital converters (ADC) and, consequently, can have advantages over the conventional schemes for high-data-rate demodulation. The demodulator core consumes 53.8mW from 2.5-V power supply while the chip area is 380×500µm2. The fabricated chip is verified by 60-GHz wireless link tests with 1.6-Gb/s data.
- (社)電子情報通信学会の論文
- 2010-12-01
著者
-
Choi Woo-young
Department Of Electrical And Computer Engineering Yonsei University
-
Choi Kwang-chun
Department Of Electrical And Electronic Engineering Yonsei University
-
KO Minsu
Department of Electrical and Electronic Engineering, Yonsei University
-
KIM Duho
Department of Electrical and Electronic Engineering, Yonsei University
-
Kim Duho
Department Of Electrical And Electronic Engineering Yonsei University
-
Ko Minsu
Department Of Electrical And Electronic Engineering Yonsei University
関連論文
- 圧縮歪InGaAs/InGaAlAs量子井戸に於ける室温励起子の光学的評価
- Analysis of a Novel Self-Aligned Elevated Source Drain Metal-Oxide-Semiconductor Field-Effect Transistor with Reduced Gate-Induced Drain Leakage Current and High Driving Capability
- ED2000-46 / SDM2000-46 Analysis of a High Performance Self-Aligned Elevated Source Drain MOSFET with Reduced Gate-Induced Drain-Leakage
- ED2000-44 / SDM2000-44 A Study on the Characteristics of High Performance Self-Aligned Asymmetric Structure (SAAS)
- ED2000-46 / SDM2000-46 Analysis of a High Performance Self-Aligned Elevated Source Drain MOSFET with Reduced Gate-Induced Drain-Leakage
- ED2000-44 / SDM2000-44 A Study on the Characteristics of High Performance Self-Aligned Asymmetric Structure(SAAS)
- Reductlon of Fiber Dispersion-Induced Third-Order Intermodulation Distortion With Injection-Locked Distributed Feedback Lasers : Optics and Quantum Electronics
- Generation of Optical Single Sideband Using a Semiconductor Laser under Modulated Light Injection
- 60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate
- Evaluation of Coupling Coefficients for Laterally-Coupled Distributed Feedback Lasers
- A 0.18μm CMOS 3.125-Gb/s Digitally Controlled Adaptive Line Equalizer with Feed-Forward Swing Control for Backplane Serial Link(Electronic Circuits)
- A Study on Modulation Configuration of Optoelectronic Oscillators Using Direct Modulation of Semiconductor Lasers
- Demonstration of 60-GHz Link Using a 1.6-Gb/s Mixed-Mode BPSK Demodulator
- Nonlinear Distortion Suppression in Directly Modulated Distributed Feedback Lasers by Sidemode Optical Injection Locking : Optics and Quantum Electronics
- Generation of Optical Single Sideband Using a Semiconductor Laser under Modulated Light Injection
- Evaluation of Coupling Coefficients for Laterally-Coupled Distributed Feedback Lasers