Application of Anodization to Reoxidize Silicon Nitride Film : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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Hwu Jenn-gwo
Room 414 Department Of Electrical Engineering National Taiwan University
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Lin Yen-po
Room 446 Department Of Electrical Engineering Graduate Institute Of Electronics Engineering National
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HWO Jenn-Gwo
Room 446, Department of Electrical Engineering, Graduate Institute of Electronics Engineering, Natio
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Hwo Jenn-gwo
Room 446 Department Of Electrical Engineering Graduate Institute Of Electronics Engineering National
関連論文
- Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes
- Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors
- Dependence of Hot-Carrier and Radiation Hardnesses of Metal-Oxide-Semiconductor Capacitors on Initial Oxide Resistance Determined by Charge-Then-Decay Method
- Application of Anodization to Reoxidize Silicon Nitride Film : Semiconductors