Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes

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概要

• 論文の詳細を見る

• The electrical characteristics of metal-reoxidized nitrided oxide (RNO)-semiconductor devices which employ furnace oxide (O_F) and rapid thermal oxide (O_R) as starting oxides are investigated. It is found that the RNO structure which uses O_F as a starting oxide and with nitridation carried out at a sufficiently high temperature, exhibits the lowest initial interface traps in comparison with other RNO structures. Metal-oxide-semiconductor (MOS) devices which use pure O_R as a gate oxide are worthy of note due to their good hot-electron and radiation hardnesses. The gate-area dependence of radiation hardness for various structures is also discussed.

• 社団法人応用物理学会の論文
• 1992-05-15

著者

• Hwu Jenn-gwo

  Room 414 Department Of Electrical Engineering National Taiwan University

• SHU Kuei

  Room 414, Department of Electrical Engineering, National Taiwan University

• LIAO Chang

  Room 414, Department of Electrical Engineering, National Taiwan University

• Shu Kuei

  Room 414 Department Of Electrical Engineering National Taiwan University

• Liao Chang

  Room 414 Department Of Electrical Engineering National Taiwan University

関連論文

• Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes
• Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors
• Dependence of Hot-Carrier and Radiation Hardnesses of Metal-Oxide-Semiconductor Capacitors on Initial Oxide Resistance Determined by Charge-Then-Decay Method
• Application of Anodization to Reoxidize Silicon Nitride Film : Semiconductors

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