Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors

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概要

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• The improvement in electrical characteristics of oxides, including oxide leakage current, radiation hardness, and hot-carrier resistance, in metal-oxide-semiconductor (MOS) capacitors by irradiation-then-anneal (ITA) treatments is studied. The ITA treatment is performed by Co-60 irradiation with a suitable dose followed by annealing in pure nitrogen at 400℃ for 10 min. It is found that samples receiving ITA treatments exhibit better performance in oxide properties than those not receiving an ITA treatment. For the examination of oxide leakage current, the charge-then-decay method is employed. Devices with two ITA treatments exhibit a very slow gate voltage decay behavior even in a moist environment. Both the radiation hardness and the hot-carrier resistance are improved by the ITA treatment. The gate area dependence and the total dose effect in ITA treatment are also discussed.

• 社団法人応用物理学会の論文
• 1992-05-15

著者

• Lin J‐j

  Room 414 Department Of Electrical Engineering National Taiwan University

• Hwu J‐g

  National Taiwan Univ. Taiwan Chn

• Hwu Jenn-gwo

  Room 414 Department Of Electrical Engineering National Taiwan University

• LIN Jin-Jenn

  Room 414, Department of Electrical Engineering, National Taiwan University

関連論文

• Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes
• Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors
• Dependence of Hot-Carrier and Radiation Hardnesses of Metal-Oxide-Semiconductor Capacitors on Initial Oxide Resistance Determined by Charge-Then-Decay Method
• Application of Anodization to Reoxidize Silicon Nitride Film : Semiconductors

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