Dependence of Hot-Carrier and Radiation Hardnesses of Metal-Oxide-Semiconductor Capacitors on Initial Oxide Resistance Determined by Charge-Then-Decay Method

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概要

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• Oxide resistances, R_<OX>'s determined by the recently reported charge-then-decay method are used to predict the hot-carrier and radiation hardnesses of metal-oxide-semiconductor (MOS) capacitors. The measurement of R_<OX> is nondestructive to tested samples. It is found that a sample with a large R_<OX> sustains a high gate voltage during constant current stressing. After stressing, the generated interface trap state is large for this sample. Also, it is found that the radiation damage of an MOS capacitor is dependent on its R_<OX>. Samples with larger R_<OX> exhibit more radiation hardness than those with smaller R_<OX> after Co-60 irradiations. Strained-bond-induced micropores are possible origins for these observations.

• 社団法人応用物理学会の論文
• 1992-08-15

著者

• Lin Kuan-chin

  Room 414 Department Of Electrical Engineering National Taiwan University

• Hwu Jenn-gwo

  Room 414 Department Of Electrical Engineering National Taiwan University

• LIN Jung-Jenn

  Room 414, Department of Electrical Engineering, National Taiwan University

• Lin Jung-jenn

  Room 414 Department Of Electrical Engineering National Taiwan University

関連論文

• Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes
• Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors
• Dependence of Hot-Carrier and Radiation Hardnesses of Metal-Oxide-Semiconductor Capacitors on Initial Oxide Resistance Determined by Charge-Then-Decay Method
• Application of Anodization to Reoxidize Silicon Nitride Film : Semiconductors

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