Effect of Electron-Hole Recombination on the Performance of Bi_<12>SiO_<20> Optical Image Converter
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概要
- 論文の詳細を見る
The characteristic curve showing transmission versus exposure for an image converter using Bi_<12>SiO_<20> single crystal was analyzed by a simple model in which crystal absorption, carrier diffusion, and recombinations between electrons and holes were considered. The variation of transmission with exposure was represented by a system of equations. The system of equations was solved numerically by an iterative technique using a computer. Results of the theoretical analysis were compared with experimental results. It was shown that the electron-hole recombination was important in the performance of the device.
- 社団法人応用物理学会の論文
- 1981-12-05
著者
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Minemoto Takumi
Department Of Instrumentation Engineering Faculty Of Engineering Kobe University
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TODA Toshihiro
Department of Instrumentation Engineering, Faculty of Engineering, Kobe University
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Minemoto Takumi
Department Of Computer And Systems Engineering Faculty Of Engineering Kobe University
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Toda Toshihiro
Department Of Instrumentation Engineering Faculty Of Engineering Kobe University
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