Measurement of Electrical Resistivity of CVD-BN Passivation Film from Gate Charge Decay Time of a MOS Transistor

概要

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The electrical resistivity of a passivation film used on integrated circuits can be determined from the gate charge decay time of a MOS transistor, where the edge wall of the gate insulator films is covered with a passivation film. For example, we determined the electrical resistivity of CVD-BN (boron nitride), which can be used as a diffusion source of boron into Si in the fabrication process and as a surface passivation of the edge wall of gate insulator films to improve device reliability. The electrical resistivity obtained is between 10^<11> and 10^<15> ohm-cm depending on the deposition temperature in the range of 400 to 550℃, although heat treatment at 720℃ for Si_3N_4 deposition and at 1200℃ for boron diffusion were also carried out during the fabrication of a test p-MOS transistor.
社団法人応用物理学会の論文
1981-10-05