A New Position Alignment Method in Electron-Beam Direct Writing Lithography Using the SEM

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概要

• 論文の詳細を見る

• A new alignment method for direct writing using an electron-beam is described. The alignment mark corresponding to the unit cell of the bit-map CAD system is defined in the poly-Si layer. The alignment marks consist of array and chip marks. The alignment method consists of two steps of two dimensional displacement and rotation of the coordinate axis. The marks are directly recognized by searching for the alignment marks on the CRT of SEM. NMOSIC test devices were fabricated on a Si wafer employing this alignment method. The alignment mistolerance between each pattern layers was less than 1 μm under the 6 μm design rule.

• 社団法人応用物理学会の論文
• 1987-06-20

著者

• Park Sun-woo

  Department Of Electrical And Electronics Engineering Faculty Of Science And Technology Sophia Univer

• Shono Katsufusa

  Department Of Electrical And Electronics Engineering Faculty Of Science And Technology Sophia Univer

• Shono Katsufusa

  Department Of Electrical And Electronics Engineering Faculty Of Science And Technology Sophia Univer

• DUMIN David

  Department of Electrical and Computer Engineering, Clemson University

• Dumin David

  Department Of Electrical And Computer Engineering Clemson University

関連論文

• A New Position Alignment Method in Electron-Beam Direct Writing Lithography Using the SEM
• A New Blanking Method for Electron Beam Lithography Using SEM
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