A New Blanking Method for Electron Beam Lithography Using SEM

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概要

• 論文の詳細を見る

• A new blanking method for electron beam (EB) lithography employing a conventional scanning electron microscope was proposed. The EB blanking for a non-exposure state was done by supplying an excess current to the condenser lens coil. Successive exposure of a square unit cell corresponding with a unit cell of our bit-map CAD gave an IC pattern on a positive or negative type EB resist. 6.0±0.2 μm minimum line width and spacing was determined at 5000 times magnification.

• 社団法人応用物理学会の論文
• 1987-01-20

著者

• Park S‐w

  Department Of Electrical And Electronics Engineering Faculty Of Science And Technology Sophia Univer

• Park Sun-woo

  Department Of Electrical And Electronics Engineering Faculty Of Science And Technology Sophia Univer

• Shono Katsufusa

  Department Of Electrical And Electronics Engineering Faculty Of Science And Technology Sophia Univer

関連論文

• A New Position Alignment Method in Electron-Beam Direct Writing Lithography Using the SEM
• A New Blanking Method for Electron Beam Lithography Using SEM
• Measurement of Electrical Resistivity of CVD-BN Passivation Film from Gate Charge Decay Time of a MOS Transistor

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