Formation of Voids in Pure Aluminum Quenched in Hydrogen Gas

概要

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Pure aluminum foil, nominally 99.999% pure and 50 μm thick, was heated at temperatures between 400℃ and 650℃ in hydrogen gas by passing direct current and then quenched in a liquid at temperatures between -10℃ and 30℃. The number density of voids was examined by electron microscopy. At a constant quenching temperature, the number density was found to be constant for the variation of liquid temperature. In hydrogen at normal pressure, the concentration of voids increased as C_<void> =A×exp (-E_<void>/kT_Q) with an increase in the quenching temperature T_Q. A was determined to be 0.0011 and E_<void>=0.86 eV. The number density of voids was found to be proportional to the square root of the partial pressure of hydrogen in a gas. These results indicate that a void is nucleated at the site of a single hydrogen atom dissolved in pure aluminum at high temperature, and that the concentration of voids corresponds to that of hydrogen dissolved in solid solution in pure aluminum.
社団法人応用物理学会の論文
1981-10-05