Low Surface Recombination Velocity on Silicon Wafer Surfaces due to Iodine-Ethanol Treatment
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概要
- 論文の詳細を見る
We investigated the electronic passivation of a silicon surface by iodine termination. The surface recombination velocity on iodine-terminated Si(100) was less than 10 cm/s, which is better than that obtained from oxide-passivated silicon surfaces. X-ray photoelectron spectroscopy (XPS) showed that the iodine-terminated silicon surface appeared to be covered by covalent silicon iodine bonds. This surface has no surface dangling bonds to act as recombination centers. We describe a simple model for this surface coverage phenomena of Si-X where X is a monovalently bonded iodine atom. We demonstrate the use of iodine-ethanol solution as as an alternative to oxidation for controlling silicon surface chemistry.
- 社団法人応用物理学会の論文
- 1999-10-15
著者
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Shingyouji Takayuki
Mitsubishi Materials Silicon Corporation R&d Center Technology Division
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Shingyouji Takayuki
Mitsubishi Materials Corporation Silicon Research Center
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KURITA Kazunari
Mitsubishi Materials Silicon Corporation, R&D Center Technology Division
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Kurita Kazunari
Mitsubishi Materials Silicon Corporation R&d Center Technology Division
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Kurita Kazunari
Mitsubishi Materials Corporation, Silicon Research Center, 1-297 Kitabukuro-cho, Omiya, Saitama 330-0835, Japan
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Shingyouji Takayuki
Mitsubishi Materials Silicon Corporation, R&D Center, Technology Division
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- Low Surface Recombination Velocity on Silicon Wafer Surfaces due to Iodine-Ethanol Treatment
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