Shingyouji Takayuki | Mitsubishi Materials Corporation Silicon Research Center

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概要

• 同名の論文著者
• Mitsubishi Materials Corporation Silicon Research Centerの論文著者

関連著者

• Shingyouji Takayuki

  Mitsubishi Materials Corporation Silicon Research Center

• Kurita Kazunari

  Mitsubishi Materials Corporation, Silicon Research Center, 1-297 Kitabukuro-cho, Omiya, Saitama 330-0835, Japan

• Shingyouji Takayuki

  Mitsubishi Materials Silicon Corporation R&d Center Technology Division

• KURITA Kazunari

  Mitsubishi Materials Silicon Corporation, R&D Center Technology Division

• Kurita Kazunari

  Mitsubishi Materials Silicon Corporation R&d Center Technology Division

• Kametani Hitoshi

  General Research Laboratory Mitubishi Electric Corporation

• IWASAKI Hiroshi

  The Institute of Scient4fic and Industrial Research, Osaka University

• YOSHINOBU Tatsuo

  The Institute of Scientific and Industrial Research, Osaka University

• Kondo H

  The Institute Of Scientific And Industrial Research Osaka University

• Yoshinobu T

  Osaka Univ. Osaka Jpn

• Yoshinobu Tatsuo

  The Institute Of Scientific And Industrial Research Osaka University

• Yoshinobu Tatsuo

  Department Of Electrical Engineering Kyoto University:(present Address) The Institute Of Scientific

• KONDO Hideyuki

  The Institute of Scientific and Industrial Research, Osaka University

• SHINGYOUJI Takayuki

  Mitsubishi Materials Silicon Corporation

• Shingyouji T

  Mitsubishi Materials Corp. Saitama Jpn

• Kondo Hideyuki

  The Institute Of Scientific And Industrial Research Osaka University

• Kondo Hideyuki

  Central Research Institute Mitsubishi Materials Corporation

• Kondo H

  Nikon Corp.

• Kurita K

  Mitsubishi Materials Silicon Corp. Saitama Jpn

• Shingyouji Takayuki

  Mitsubishi Materials Corporation, Silicon Research Center, 1-297 Kitabukuro-cho, Omiya, Saitama 330-0835, Japan

• Shingyouji Takayuki

  Mitsubishi Materials Silicon Corporation, R&D Center, Technology Division

もっと見る 閉じる

著作論文

• Simulation of Light Scattering by a Particle on a Film-Coated Substrate Using Coupled-Dipole Method
• Identification and Quantification of Transition Metal Impurities in Czochralski Silicon Wafers using Microwave Photoconductive Decay Lifetime Measurements
• Low Surface Recombination Velocity on Silicon Wafer Surfaces due to Iodine-Ethanol Treatment
• Room Temperature Annealing Behavior of Copper-Related Deep Levels in P-Type Floating Zone Silicon Wafers

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