Identification and Quantification of Transition Metal Impurities in Czochralski Silicon Wafers using Microwave Photoconductive Decay Lifetime Measurements
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-11-15
著者
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Shingyouji Takayuki
Mitsubishi Materials Silicon Corporation R&d Center Technology Division
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Shingyouji Takayuki
Mitsubishi Materials Corporation Silicon Research Center
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KURITA Kazunari
Mitsubishi Materials Silicon Corporation, R&D Center Technology Division
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Kurita K
Mitsubishi Materials Silicon Corp. Saitama Jpn
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Kurita Kazunari
Mitsubishi Materials Silicon Corporation R&d Center Technology Division
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Kurita Kazunari
Mitsubishi Materials Corporation, Silicon Research Center, 1-297 Kitabukuro-cho, Omiya, Saitama 330-0835, Japan
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- Simulation of Light Scattering by a Particle on a Film-Coated Substrate Using Coupled-Dipole Method
- Identification and Quantification of Transition Metal Impurities in Czochralski Silicon Wafers using Microwave Photoconductive Decay Lifetime Measurements
- Low Surface Recombination Velocity on Silicon Wafer Surfaces due to Iodine-Ethanol Treatment
- Room Temperature Annealing Behavior of Copper-Related Deep Levels in P-Type Floating Zone Silicon Wafers