Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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BOLOGNESI Colombo
Compound Semiconductor Device Laboratory (CSDL), Simon Fraser University, School of Engineering Scie
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Pardo Fabrice
L2m-cnrs
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Bolognesi C
Simon Fraser Univ. Bc Can
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Bolognesi Colombo
Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit
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Bolognesi Colombo
Compound Semiconductor Device Laboratory (csdl) Simon Fraser University
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Dvorak Martin
Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit
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MATINE Noureddine
Compound Semiconductor Device Laboratory (CSDL) Simon Fraser University
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DVORAK Margin
Compound Semiconductor Device Laboratory (CSDL) Simon Fraser University
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PELOUARD Jean-Luc
L2M-CNRS
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Matine N
Simon Fraser Univ. Bc Can
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Matine Noureddine
Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit
関連論文
- Impact Ionization Effects on the Microwave Performance of InAs Channel Heterostructure Field-Effect Transistors : the Role of Channel Quantization
- Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETs
- Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETs
- Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations
- Ultrahigh Performance Staggered Lineup ("Type-II") InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors : Review Paper