Impact Ionization Effects on the Microwave Performance of InAs Channel Heterostructure Field-Effect Transistors : the Role of Channel Quantization
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Chow David
Hughes Research Laboratories
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BOLOGNESI Colombo
Compound Semiconductor Device Laboratory (CSDL), Simon Fraser University, School of Engineering Scie
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DVORAK Martin
Compound Semiconductor Device Laboratory (CSDL), Simon Fraser University, School of Engineering Scie
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Dvorak M
Simon Fraser Univ. Bc Can
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Bolognesi C
Simon Fraser Univ. Bc Can
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Bolognesi Colombo
Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit
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Dvorak Martin
Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit
関連論文
- Impact Ionization Effects on the Microwave Performance of InAs Channel Heterostructure Field-Effect Transistors : the Role of Channel Quantization
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- Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations
- Ultrahigh Performance Staggered Lineup ("Type-II") InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors : Review Paper